a p83t02gh/j-h f advanced power n-channel enhancement mode electronics corp. power mosfet low on-resistance bv dss 25v simple drive requirement r ds(on) 6m fast switching characteristic i d 75a rohs compliant & halogen-free description absolute maximum ratings@t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w p d @t a =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 2.5 /w rthj-a 62.5 /w rthj-a maximum thermal resistance, junction-ambient 110 /w data & specifications subject to change without notice total power dissipation 3 2.4 60 halogen-free product 240 parameter rating drain-source voltage 25 total power dissipation gate-source voltage + 20 drain current, v gs @ 10v 75 drain current, v gs @ 10v 53 pulsed drain current 1 maximum thermal resistance, junction-ambient (pcb mount) 3 201501293 1 thermal data parameter storage temperature range operating junction temperature range -55 to 175 -55 to 175 the to-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. the through-hole version (ap83t02gj) is available for low-profile applications. g d s a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. g d s to-251(j) g d s to-252(h)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 25 - - v v gs =10v, i d =40a - - 6 m v gs =4.5v, i d =30a - - 11 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =30a - 55 - s i dss drain-source leakage current v ds =25v, v gs =0v - - 10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =15a - 24 38 nc q gs gate-source charge v ds =20v - 4 - nc q gd gate-drain ("miller") charge v gs =4.5v - 16 - nc t d(on) turn-on delay time v ds =15v - 10 - ns t r rise time i d =30a - 84 - ns t d(off) turn-off delay time r g =3 ? ,v gs =10v - 26 - ns t f fall time r d =0.5 ? -18- ns c iss input capacitance v gs =0v - 1150 1840 pf c oss output capacitance v ds =25v - 485 - pf c rss reverse transfer capacitance f=1.0mhz - 365 - pf r g gate resistance f=1.0mhz - 0.9 - source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =30a, v gs =0v - - 1.2 v t rr reverse recovery time i s =10a, v gs =0 v , - 33 - ns q rr reverse recovery charge di/dt=100a/s - 25 - nc notes: 1.pulse width limited by max. junction temperature 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. ap83t02gh/j-hf r ds(on) static drain-source on-resistance 2 3.surface mounted on 1 in 2 copper pad of fr4 board 2
a p83t02gh/j-h f fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 20 40 60 80 100 120 0123456 v ds , drain-to-source voltage (v) i d , drain current (a) t c =175 o c 10v 7.0v 6.0v 5.0v v g =4.0v 0 40 80 120 160 200 0481216 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 6.0v 5.0v v g = 4.0v 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 200 t j , junction temperature ( o c) normalized r ds(on) i d =40a v g =10v 0 10 20 30 40 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =175 o c 4 5 6 7 8 9 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =30a t c =25 o c 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 200 t j , junction temperature ( o c) normalized v gs(th)
ap83t02gh/j-h f fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 1 10 100 1000 0.1 1 10 100 v ds ,drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 2 4 6 8 10 0 10203040 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =15a v ds =12v v ds =15v v ds =20v 0 400 800 1200 1600 1 5 9 13 17 21 25 29 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss q v g 4.5v q gs q gd q g charge t d(on) t r t d(off) t f v ds v gs 10% 90% operation in this area limited by r ds(on)
ap83t02gh/j-hf marking information to-251 to-252 5 part numbe r package code meet rohs requirement for low voltage mosfet only 83t02gj ywwsss date code (ywwsss) y last digit of the year ww week sss sequence part numbe r package code date code (ywwsss) y last digit of the year ww week sss sequence 83t02gh ywwsss meet rohs requirement for low voltage mosfet only
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